Laser Diode Bar, 760nm, Unmounted

Key Features:

  • Wavelength: 760nm
  • Output power: 40W
  • Operation mode: CW
  • Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
  • Reliable Power: High, reliable output power, and ideal beam characteristics.
  • Economical: Our semiconductors are very efficient and are characterized by a long service life.


There are many configurations and options available. If you do not see exactly what you need below, please contact us!

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Part Number
Part Description
Lead Time
Unmounted Laser Diode Unpackaged Laser Diode JDL-BAB-30-19-760-TE-40-1.5

Unmounted Laser Diode Bar, 760nm, 40W, 30% Fill Factor, 150um Emitters / 500um Pitch, 1.5mm Cavity Length


8+ weeks

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The JDL-760 is a high-power, 760nm, unmounted diode laser bar, with 40W of CW output power, designed for the most demanding applications.  They are extremely reliable, efficient, and durable.

Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators.

Our Capabilities include:

  • InGaAs-based semiconductors
  • Optical output power: 8 watts to 300 watts CW and 500 watts QCW
  • Standard wavelengths: 760 to 1070 nanometers (others available on request)
  • Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
  • Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
  • Optional: low AR coating (typically < 0.3%)
  • Optional: continuous metallization

Wavelength (nm)

Output power (W)





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