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CartAesthetics Lasers Overview
Aesthetics Lasers, for applications varying from laser hair removal to scar tissue reduction, are one of the largest sectors in the medical laser industry. Typically, these lasers operate in the near-infrared region due to the low absorption of hemoglobin and water in comparison to melanin between 700 nm and 1000 nm. But for some applications such as laser tattoo removal or acne treatment visible lasers are used, and for collagen stimulation, longer wavelength lasers are often used. Aesthetics lasers can be either q-switched or long-pulsed (modulated continuous-wave lasers) depending on if the goal is to cause ablation or localized heating. On this page, you will find a list of all of the full range of aesthetics lasers we offer at RPMC, including high power laser diodes, flashlamp-pumped lasers, and fiber lasers.
RPMC has years of experience supporting Aesthetics applications, helping industry professionals select the right tool for the job.
Contact Us today to let one of our knowledgeable Product Managers assist you!
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[description] => Aesthetics Lasers Overview
Aesthetics Lasers, for applications varying from laser hair removal to scar tissue reduction, are one of the largest sectors in the medical laser industry. Typically, these lasers operate in the near-infrared region due to the low absorption of hemoglobin and water in comparison to melanin between 700 nm and 1000 nm. But for some applications such as laser tattoo removal or acne treatment visible lasers are used, and for collagen stimulation, longer wavelength lasers are often used. Aesthetics lasers can be either q-switched or long-pulsed (modulated continuous-wave lasers) depending on if the goal is to cause ablation or localized heating. On this page, you will find a list of all of the full range of aesthetics lasers we offer at RPMC, including high power laser diodes, flashlamp-pumped lasers, and fiber lasers.
[su_spacer size="30"]
RPMC has years of experience supporting Aesthetics applications, helping industry professionals select the right tool for the job.
Contact Us today to let one of our knowledgeable Product Managers assist you!
[su_spacer size="55"]
[su_button url="https://www.rpmclasers.com/contact/" target="blank" style="flat" background="#ff6600" size="10" center="yes"]Talk to a Product Manager[/su_button]
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[post_content] => Overview of HL37013MG | 375nm Multimode Laser Diode
Ushio, experts in semiconductor laser and LED technology, offer the multi-mode UV HL37013MG 375nm laser diode with 200mW output power. Packaged in a compact 5.6mm configuration this 375 nm laser diode is ideal for an OEM integration into a wide variety of applications including machine vision, fluorescence, and photoluminescence. The HL37013MG diode laser features a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability.
Features:
- High output power
- High efficiency
- Low operating current
- Small package: 5.6mm
- Multimode mode
- TE mode oscillation
HL37013MG Applications:
- Direct imaging for PCB
- Industry
- Display
- Bio & Medica
Overview of HL40033G | 405nm Multimode Laser Diode
Ushio, experts in semiconductor laser and LED technology, offer the HL40033G 405nm multi-mode violet diode laser with 1,000mW output power. Packaged in a compact TO-9 configuration this 405 nm laser diode is ideal for an OEM integration into a wide variety of applications including machine vision, fluorescence, and photoluminescence. The HL40033G diode laser features a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability.HL40033G Features:
- High output power
- High efficiency
- Low operating current
- Small package: 9mm
- multimode mode
- TE mode oscillation
HL40033G Applications:
- Direct imaging for PCB
- Industry
- Display
- Bio & Medica
Overview of HL40085G | 405nm Multimode Laser Diode
Ushio, experts in semiconductor laser and LED technology, offer the HL40085G 405nm multi-mode violet diode laser with 1,000mW output power. Packaged in a compact TO-9 configuration this 405 nm laser diode is ideal for an OEM integration into a wide variety of applications including machine vision, fluorescence, and photoluminescence. The HL40085G diode laser features a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability.HL40085G Features:
- High output power
- High efficiency
- Low operating current
- Small package: 9mm
- multimode mode
- TE mode oscillation
HL40085G Applications:
- Direct imaging for PCB
- Industry
- Display
- Bio & Medical
Overview of HL40093MG | 404nm Multimode Laser Diode
Ushio, experts in semiconductor laser and LED technology, offer the HL40093MG 404nm multi-mode violet diode laser with 400mW output power. Packaged in a compact TO-56 configuration this 404 nm laser diode is ideal for an OEM integration into a wide variety of applications including machine vision, fluorescence, and photoluminescence. The HL40093MG diode laser features a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability.HL40093MG Features:
- High output power
- High efficiency
- Low operating current
- Small package: 5.6mm
- Multimode mode
- TE mode oscillation
HL40093MG Applications:
- Direct imaging for PCB
- Industry
- Display
- Bio & Medica
Overview of JDL-BAB-20-19-1060-TE-80-2.0:
The JDL-BAB-20-19-1060-TE-80-2.0 is a high-power, 1060nm, unmounted diode laser bar, with 80W of CW output power, designed for the most demanding applications. They are extremely reliable, efficient, and durable. Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators. [su_spacer="5"] [su_spacer="5"] [su_spacer="5"]JDL-BAB-20-19-1060-TE-80-2.0 Specifications:
- Wavelength: 1060nm
- Output power: 80W
- Operation mode: CW
- Filling factor: 20%
- Resonator length: 2.0mm
JDL-BAB-20-19-1060-TE-80-2.0 Features:
- High laser power
- High efficiency
- Long lifetime, high reliability
- Excellent beam characteristics
JDL-BAB-20-19-1060-TE-80-2.0 Applications:
- Industry: direct material processing, heating or lighting, pump sources for fiber and solid-state lasers, printing technology.
- Medicine: Esthetics, dermatology, and surgery.
Jenoptik focuses on the following:
- Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
- Reliable Power: High, reliable output power, and ideal beam characteristics.
- Economical: Our semiconductors are very efficient and are characterized by a long service life.
- InGaAs-based semiconductors
- Optical output power: 8 watts to 200 watts cw and 500 watts qcw
- Standard wavelengths: 760 to 1030 nanometers (others available on request)
- Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
- Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
- Optional: low AR coating (typically < 0.3%)
- Optional: continuous metalization
Overview of JDL-BAB-20-19-808-TE-50-1.5:
The JDL-BAB-20-19-808-TE-50-1.5 is a high-power, 808nm, unmounted diode laser bar, with 50W of CW output power, designed for the most demanding applications. They are extremely reliable, efficient, and durable. Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators. [su_spacer="5"] [su_spacer="5"] [su_spacer="5"]JDL-BAB-20-19-808-TE-50-1.5 Specifications:
- Wavelength: 808nm
- Output power: 50W
- Operation mode: CW
- Filling factor: 20%
- Resonator length: 1.5mm
JDL-BAB-20-19-808-TE-50-1.5 Features:
- High laser power
- High efficiency
- Long lifetime, high reliability
- Excellent beam characteristics
JDL-BAB-20-19-808-TE-50-1.5 Applications:
- Industry: direct material processing, heating or lighting, pump sources for fiber and solid-state lasers, printing technology.
- Medicine: Esthetics, dermatology, and surgery.
Jenoptik focuses on the following:
- Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
- Reliable Power: High, reliable output power, and ideal beam characteristics.
- Economical: Our semiconductors are very efficient and are characterized by a long service life.
- InGaAs-based semiconductors
- Optical output power: 8 watts to 200 watts cw and 500 watts qcw
- Standard wavelengths: 760 to 1030 nanometers (others available on request)
- Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
- Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
- Optional: low AR coating (typically < 0.3%)
- Optional: continuous metalization
Overview of JDL-BAB-20-19-808-TE-60-2.0:
The JDL-BAB-20-19-808-TE-60-2.0 is a high-power, 808nm, unmounted diode laser bar, with 60W of CW output power, designed for the most demanding applications. They are extremely reliable, efficient, and durable. Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators. [su_spacer="5"] [su_spacer="5"] [su_spacer="5"]JDL-BAB-20-19-808-TE-60-2.0 Specifications:
- Wavelength: 808nm
- Output power: 60W
- Operation mode: CW
- Filling factor: 20%
- Resonator length: 2.0mm
JDL-BAB-20-19-808-TE-60-2.0 Features:
- High laser power
- High efficiency
- Long lifetime, high reliability
- Excellent beam characteristics
JDL-BAB-20-19-808-TE-60-2.0 Applications:
- Industry: direct material processing, heating or lighting, pump sources for fiber and solid-state lasers, printing technology.
- Medicine: Esthetics, dermatology, and surgery.
Jenoptik focuses on the following:
- Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
- Reliable Power: High, reliable output power, and ideal beam characteristics.
- Economical: Our semiconductors are very efficient and are characterized by a long service life.
- InGaAs-based semiconductors
- Optical output power: 8 watts to 200 watts cw and 500 watts qcw
- Standard wavelengths: 760 to 1030 nanometers (others available on request)
- Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
- Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
- Optional: low AR coating (typically < 0.3%)
- Optional: continuous metalization
Overview of JDL-BAB-20-19-915-TE-60-1.5:
The JDL-BAB-20-19-915-TE-60-1.5 is a high-power, 915nm, unmounted diode laser bar, with 60W of CW output power, designed for the most demanding applications. They are extremely reliable, efficient, and durable. Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators. [su_spacer="5"] [su_spacer="5"] [su_spacer="5"]JDL-BAB-20-19-915-TE-60-1.5 Specifications:
- Wavelength: 915nm
- Output power: 60W
- Operation mode: CW
- Filling factor: 20%
- Resonator length: 1.5mm
JDL-BAB-20-19-915-TE-60-1.5 Features:
- High laser power
- High efficiency
- Long lifetime, high reliability
- Excellent beam characteristics
JDL-BAB-20-19-915-TE-60-1.5 Applications:
- Industry: direct material processing, heating or lighting, pump sources for fiber and solid-state lasers, printing technology.
- Medicine: Esthetics, dermatology, and surgery.
Jenoptik focuses on the following:
- Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
- Reliable Power: High, reliable output power, and ideal beam characteristics.
- Economical: Our semiconductors are very efficient and are characterized by a long service life.
- InGaAs-based semiconductors
- Optical output power: 8 watts to 200 watts cw and 500 watts qcw
- Standard wavelengths: 760 to 1030 nanometers (others available on request)
- Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
- Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
- Optional: low AR coating (typically < 0.3%)
- Optional: continuous metalization
Overview of JDL-BAB-20-19-915-TE-80-2.0:
The JDL-BAB-20-19-915-TE-80-2.0 is a high-power, 915nm, unmounted diode laser bar, with 80W of CW output power, designed for the most demanding applications. They are extremely reliable, efficient, and durable. Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators. [su_spacer="5"] [su_spacer="5"] [su_spacer="5"]JDL-BAB-20-19-915-TE-80-2.0 Specifications:
- Wavelength: 915nm
- Output power: 80W
- Operation mode: CW
- Filling factor: 20%
- Resonator length: 2.0mm
JDL-BAB-20-19-915-TE-80-2.0 Features:
- High laser power
- High efficiency
- Long lifetime, high reliability
- Excellent beam characteristics
JDL-BAB-20-19-915-TE-80-2.0 Applications:
- Industry: direct material processing, heating or lighting, pump sources for fiber and solid-state lasers, printing technology.
- Medicine: Esthetics, dermatology, and surgery.
Jenoptik focuses on the following:
- Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
- Reliable Power: High, reliable output power, and ideal beam characteristics.
- Economical: Our semiconductors are very efficient and are characterized by a long service life.
- InGaAs-based semiconductors
- Optical output power: 8 watts to 200 watts cw and 500 watts qcw
- Standard wavelengths: 760 to 1030 nanometers (others available on request)
- Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
- Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
- Optional: low AR coating (typically < 0.3%)
- Optional: continuous metalization
Overview of JDL-BAB-20-19-940-TE-60-1.5:
The JDL-BAB-20-19-940-TE-60-1.5 is a high-power, 940nm, unmounted diode laser bar, with 60W of CW output power, designed for the most demanding applications. They are extremely reliable, efficient, and durable. Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators. [su_spacer="5"] [su_spacer="5"] [su_spacer="5"]JDL-BAB-20-19-940-TE-60-1.5 Specifications:
- Wavelength: 940nm
- Output power: 60W
- Operation mode: CW
- Filling factor: 20%
- Resonator length: 1.5mm
JDL-BAB-20-19-940-TE-60-1.5 Features:
- High laser power
- High efficiency
- Long lifetime, high reliability
- Excellent beam characteristics
JDL-BAB-20-19-1060-TE-80-2.0 Applications:
- Industry: direct material processing, heating or lighting, pump sources for fiber and solid-state lasers, printing technology.
- Medicine: Esthetics, dermatology, and surgery.
Jenoptik focuses on the following:
- Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
- Reliable Power: High, reliable output power, and ideal beam characteristics.
- Economical: Our semiconductors are very efficient and are characterized by a long service life.
- InGaAs-based semiconductors
- Optical output power: 8 watts to 200 watts cw and 500 watts qcw
- Standard wavelengths: 760 to 1030 nanometers (others available on request)
- Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
- Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
- Optional: low AR coating (typically < 0.3%)
- Optional: continuous metalization
Overview of HL37013MG | 375nm Multimode Laser Diode
Ushio, experts in semiconductor laser and LED technology, offer the multi-mode UV HL37013MG 375nm laser diode with 200mW output power. Packaged in a compact 5.6mm configuration this 375 nm laser diode is ideal for an OEM integration into a wide variety of applications including machine vision, fluorescence, and photoluminescence. The HL37013MG diode laser features a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability.Features:
- High output power
- High efficiency
- Low operating current
- Small package: 5.6mm
- Multimode mode
- TE mode oscillation
HL37013MG Applications:
- Direct imaging for PCB
- Industry
- Display
- Bio & Medica
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The Quantas-Q-SHIFT family of Q-switched DPSS lasers feature a built‑in nonlinear wavelength conversion stage, allowing the production of wavelengths that are not accessible with conventional solid-state laser sources, including 1163, 1177, 1300, 1317, 1551 and 1571nm. An optional harmonics generator is also available for for the Q-SHIFT, allowing generation of up to the 4th harmonic for each fundamental wavelength.
